saturation current การใช้

• The saturation current increases with the increase of the light intensity.
• Where " I " 0 is the reverse saturation current.
• L; currents as a ratio with reverse saturation current " I " 0.
• In practice, it is often difficult and usually considered uninformative to measure the electron saturation current experimentally.
• The ion-saturation current is taken as a surrogate for the density and the floating potential as a surrogate for the plasma potential.
• Look at the derivation for the saturation current density formula for the MOSFET .-- mattb @ 2007-03-29T17 : 16Z
• Boosting rail voltage accomplishes this by increasing gate saturation current per the various MOSFET models ( square law, bulk charge, etc ).
• For a surface biased strongly negative so that it draws the "'ion saturation current "', the approximation is very good.
• In fact, this is generally not the case : as temperature rises, the saturation current I _ S rises, and this effect dominates.
• The net result would be the measurement of a double-probe characteristic; in other words, electron saturation current equal to the ion saturation current.
• The net result would be the measurement of a double-probe characteristic; in other words, electron saturation current equal to the ion saturation current.
• Other examples of nonlinear elements are transistors and other semiconductor devices, vacuum tubes, and iron core inductors and transformers when operated above their saturation current.
• The inductor is given known levels of peak current, which if chosen carefully in regards to saturation current can reduce switching losses in its magnetic core.
• The theory is similar to that of a single probe, except that the current is limited to the ion saturation current for both positive and negative voltages.
• Higher FET saturation current reduces the gate delay product ( I think that's what they call CV / I . . been awhile since I've done VLSI ).
• The bias voltage is chosen to be a few times the electron temperature so that the negative electrode draws the ion saturation current, which, like the floating potential, is directly measured.
• In this configuration, the inputs are completely separated and the number of inputs is limited only by the small reverse saturation current of the cut-off transistors at output logical " 1 ".
• 1 ) the ball-pen probe collector is biased by swept voltage ( low frequency ) to provide the I-V characteristics and see the saturation current of electrons as well as ions.
• Note that the saturation current is " not " a constant for a given device; it varies with temperature; this variance is the dominant term in the temperature coefficient for a diode.
• Both the saturation current I _ \ text { SO } \, and the thermal voltage V _ \ text { T } \, are temperature dependent, hence, temperature compensating circuits may be required.